Magnetism in V-/Mn-doped ZnO layers fabricated on sapphire

Doping ZnO with transition metals (TM) is an obvious approach to produce diluted magnetic semiconductors for magnetoelectronic and spintronic applications. We have carried out experimental studies on the fabrication and characterisation of Mn-doped ZnO layers and V-doped ZnO layers and nanorods, the results of which are reviewed in this paper. From SQUID measurements, both epitaxial and implanted ZnMnO layers show paramagnetic behaviour. Epitaxial ZnVO layers show ferromagnetic SQUID signals, but the presence of any secondary phases in the ZnVO layers may not be ruled out. We also show that the used Al₂O₃ substrates produce a ferromagnetic SQUID signal, that complicates the analysis of magnetisation data and hence the confirmation of ferromagnetism only from SQUID results. PACS 75.50.Pp; 85.75.-d; 81.05.Dz; 75.30.-m; 75.60.Nt; 75.70.-i     

H<Subscript>2</Subscript>O<Subscript>2</Subscript>-molecular beam epitaxy of high quality ZnO

We have studied the growth and characterization of ZnO epilayers on (0001)-sapphire by H₂O₂-molecular beam epitaxy (MBE). A high temperature (HT) MgO buffer followed by a low-temperature ZnO buffer was introduced in order to accommodate the lattice mismatch between ZnO and sapphire. The surface morphology of the samples was studied using atomic force microscopy (AFM), and scanning electron microscopy (SEM). The crystalline quality of the layers was investigated by employing high resolution X-ray diffractometry (HRXRD) and high resolution transmission electron microscopy (HRTEM). The electrical properties of the grown ZnO layers were studied by Hall-effect measurements in a standard van der Pauw configuration. The measured surface roughness for the best layers is as low as 0.26 nm rms. HRXRD measurements of the obtained ZnO layers show excellent quality of the single crystalline ZnO heteroepitaxially grown on (0001)-sapphirewith a HT MgO buffer layers. The influence of the growth conditions on the crystalline quality is discussed. The FWHM of the HRXRD (0002) rocking curves measured for the 2-inch ZnO-on-sapphire is as low as 27 arcsec with a very high lateral homogeneity across the whole 2-inch ZnO epilayers. The results indicate that H₂O₂-MBE is a suitable technique to fabricate ZnO epilayers of very high quality. PACS 61.10.Nz; 68.37.Lp; 81.05.Dz; 81.15.Hi     

Far-infrared magnetospectroscopy on epitaxial zero-gap and wide-gap semiconductor layer systems

Far-infrared magnetotransmission measurements have been performed on MBE-grown HgTe and CdTe epilayers. The results on the HgTe samples can be understood by the standard Pidgeon-Brown model for bulk HgTe. For the CdTe layers, transitions were only observed under illumination by visible light. The spectra are dominated by the 1s2p transition of the shallow hydrogen-like impurity. These transitions are persistent with a life time of the order of magnitude of one second.     

Selective growth of ZnO nanorods in aqueous solution

ZnO nanorod arrays find applications in solar energy conversion, light emission and other promising areas. One approach to generate ZnO nanorods is the cost efficient aqueous chemical growth (ACG). Usually the ACG process is based on a nucleation step followed by growth of ZnO nanorods in aqueous solution at temperatures below 95 C.We report on the fabrication of homogeneous, large scale arrays of nanorods on various substrate materials (Si, glass, polymer) by ACG. PL-measurements show surprisingly good optical quality although the rods were grown at low temperature.Even though we have developed patterning of these arrays with photolithographic techniques, a bottom up approach for lateral patterning is important concerning further applications especially for mass-production. The substrates with patterned metal layers were employed to realize selective growth of nanorods. The experiments were carried out on Ti-, Ag- and Pt-patterned substrates. Selective growth on metal structured glass substrates was developed and is described.     

Demonstration of electrical spin injection into a semiconductor using a semimagnetic spin aligner

Spin injection into semiconductors has been a field of growing interest during recent years, because of the large possibilities in basic physics and for device applications that a controlled manipulation of the electrons spin would enable. However, it has proven very difficult to realize such a spin injector experimentally. Here we demonstrate electrical spin injection and detection in a GaAs/AlGaAs p-i-n diode using a semimagnetic II–VI semiconductor (Zn_{1 − x − y}Be_xMn_ySe) as a spin aligner. The degree of circular polarization of the electroluminescence from the diode is related to the spin polarization of the conduction electrons. Thus, it may be used as a detector for injected spin-polarized carriers. Our experimental results indicate a spin polarization of the injected electrons of up to 90% and are reproduced for several samples. The degree of optical polarization depends strongly on the Mn concentration and the thickness of the spin aligner. Electroluminescence from a reference sample without spin aligner as well as photoluminescence after unpolarized excitation in the spin aligner sample show only the intrinsic polarization in an external magnetic field due to the GaAs bandstructure. We can thus exclude side effects from Faraday effect or magnetic circular dichroism in the semimagnetic layer as the origin of the observed circularly polarized electroluminescence.     

Vapour phase transport growth of ZnO layers and nanostructures

We have developed a novel advanced VPT set-up. ZnO layers and nanorods were grown employing a specially designed horizontal vapour transport system with elemental sources at relatively low temperatures without catalysis. We employed 6N elemental Zn carried by nitrogen and 99.995% oxygen as reactants. Sapphire, SiC, bulk ZnO and ZnO epitaxial layers were implemented as substrates for ZnO growth. Growth temperatures ranged from 500 to 900 C. Reactor pressures were from 5 mbar to atmospheric pressure. We employed x-ray diffractometry, optical microscopy, scanning electron microscopy and atomic force microscopy to investigate the obtained ZnO samples and the influence of different growth parameters on the ZnO homo- and heteroepitaxial growth and to optimise the set of growth parameters either for both epitaxial layers and nanostructures. We also show that the quality of the VPT grown ZnO epitaxial layers on sapphire can be even higher (evaluated from FWHM of the XRD rocking curves) than the MBE grown ones used as epiwafers for VPT growth. High quality ZnO layers with extremely narrow FWHM of the (0002) rocking curve of 38″ are fabricated employing our VPT approach.     

Optical properties of ZnO nanorods realised by aqueous chemical growth

Photoluminescence investigations of ZnO nanorods realised by an advanced two-step aqueous chemical growth process have been carried out revealing well-resolved near-band-edge emission accompanied by phonon replicas. The optical properties of nanorods with different lengths and diameters are quite similar indicating a good control of the growth process without influencing the optical properties even on plastic substrate. The near-band-edge emission has a very broad line-width of 10 meV. Annealing in Ar atmosphere reduces the deep-level emission with a corresponding increase of the near-band-edge emission.